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| Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1111 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 9S Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio *1 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 0.8 80 10 1.0 +30% 1.2 -4.9 - 0.2 35 0.5 0.99 - 0.25 V V V MHz k min -50 -50 - 0.1 - 0.5 - 0.5 typ max Unit V V A A mA Ratio between 2 elements +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 XN1111 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE -160 -140 IB=-1.0mA Ta=25C -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 160 VCE= -10V Ta=75C -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Collector current IC (mA) -0.9mA -120 -100 -80 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA Forward current transfer ratio hFE 25C 120 -25C 80 25C 40 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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